Design and Fabrication of 4H-SiC RF MOSFETs-Reference-Cited by-同舟云学术

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Design and Fabrication of 4H-SiC RF MOSFETs

Published:2007 Issue:12 Volume:54 Page:3138-3145
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gudjonsson Gudj�n I.,Allerstam Fredrik,Sveinbjornsson Einar �.,Hjelmgren Hans,Nilsson Per-�ke,Andersson Kristoffer,Zirath Herbert,Rodle Thomas,Jos Rik

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4383014/04383029.pdf?arnumber=4383029

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Degradation Behavior and Mechanism of SiC Power MOSFETs Under Repetitive Transmission Line Pulse Stress;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-12

2. Design Considerations for 4H-SiC Lateral BJTs for High Temperature Logic Applications;IEEE Journal of the Electron Devices Society;2018

3. A power dual-gate laterally-diffused MOSFET on 4H–SiC;International Journal of Electronics Letters;2016-10-11

4. Simulation Study of Dual-Gate Trench LDMOSFET on 4H-SiC;2015 Second International Conference on Advances in Computing and Communication Engineering;2015-05

5. Lateral Power Transistors on Wide Bandgap Semiconductors;Power Systems;2014

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