Substrate temperature measurement in a molecular beam epitaxy chamber usingin situGaAs photoluminescence monitoring
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105507
Reference13 articles.
1. Improved GaAs substrate temperature measurement during molecular-beam epitaxial growth
2. Infra-red transmission spectroscopy of GaAs during molecular beam epitaxy
3. In situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon
4. Noncontact, highly sensitive, optical substrate temperature measurement technique
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