Improved GaAs substrate temperature measurement during molecular-beam epitaxial growth
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 29 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical in-situ temperature management for high-quality ZnO molecular beam epitaxy;Journal of Crystal Growth;2021-03
2. Temperature mapping using single wavelength pyrometry during epitaxial growth;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-11
3. Measurements of parameters of the low-temperature molecular-beam epitaxy of GaAs;Semiconductors;2002-08
4. Physical and Chemical Methods for Thin-Film Deposition and Epitaxial Growth;Specimen Handling, Preparation, and Treatments in Surface Characterization;2002
5. Use of optical fiber pyrometry in molecular beam epitaxy;Journal of Crystal Growth;1997-05
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