1. Photoluminescence and Raman studies of GaN films grown by MOCVD;Tung;J. Phys.: Conf. Ser.,2009
2. D. Yoo, Growth and Characterization of III-nitrides materials systems for photonic and electronic devices by metalorganic chemical vapor deposition (Ph.D. thesis), Georgia Institute of Technology, Atlanta, 2007.
3. Emissivity-correcting near-UV pyrometry for group-III nitride OMVPE;Creighton;J. Cryst. Growth,2006
4. Sub-bandgap absorption of gallium nitride determined by photothermal deflection spectroscopy;Ambacher;Solid State Commun.,1996
5. Growth temperature–phase stability relation in In1−xGaxN epilayers grown by high-pressure CVD;Durkaya;Mater. Res. Soc. Symp. Proc.,2010