Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2716068
Reference10 articles.
1. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
3. Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
4. Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
5. Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy
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1. Investigation of AlN/Si based heterogeneous Junction using inter-digitated electrodes for enhanced UV light detection;Optik;2022-09
2. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction;Journal of Applied Physics;2018-01-10
3. Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes;Crystals;2017-10-04
4. Microstructural analysis of an epitaxial AlN thick film/trench-patterned template by three-dimensional reciprocal lattice space mapping technique;Applied Physics Express;2016-10-11
5. GaN grown with InGaN as a weakly bonded layer;CrystEngComm;2011
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