Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes
Author:
Publisher
MDPI AG
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Link
http://www.mdpi.com/2073-4352/7/10/300/pdf
Reference112 articles.
1. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
2. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance
3. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
4. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
5. Light extraction enhancement of 265 nm deep-ultraviolet light-emitting diodes with over 90 mW output power via an AlN hybrid nanostructure
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