Effect of Highly Doped p-AlGaN Layer to Improve the Ultimate Performance Parameters of 275 nm AlGaN-based UV-C LED-Reference-Cited by-同舟云学术

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Effect of Highly Doped p-AlGaN Layer to Improve the Ultimate Performance Parameters of 275 nm AlGaN-based UV-C LED

Published:2024-03-03 Issue: Volume: Page:1-3
ISSN:
Container-title:2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
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Author:

Choubey Balkrishna¹,Ghosh Kankat¹

Affiliation:

1. Indian Institute of Technology Jammu,Jammu,India,181221

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512175.pdf?arnumber=10512175

Reference8 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

3. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

4. P-type silicon as hole supplier for nitride-based UVC LEDs

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