AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm-Reference-Cited by-同舟云学术

AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm

Published:2015-01-21 Issue:2 Volume:5 Page:380
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Li X.,Sundaram S.,Disseix P.,Le Gac G.,Bouchoule S.,Patriarche G.,Réveret F.,Leymarie J.,El Gmili Y.,Moudakir T.,Genty F.,Salvestrini J-P.,Dupuis R. D.,Voss P. L.,Ougazzaden A.

Funder

French National Research Agency (ANR)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference35 articles.

1. High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics

2. Plasma-assisted molecular beam epitaxy of AlGaN heterostructures for deep-ultraviolet optically pumped lasers

3. Stimulated emission at 257 nm from optically-pumped AlGaN/AlN heterostructure on AlN substrate

4. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas

5. Theoretical modeling for quantum-confined Stark effect due to internal piezoelectric fields in GaInN strained quantum wells

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