Self-organized propagation of dislocations in GaN films during epitaxial lateral overgrowth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125781
Reference12 articles.
1. Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
2. Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
4. Selective Area Growth of GaN by MOVPE and HVPE
5. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
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