Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates-Reference-Cited by-同舟云学术

Defect-rich GaN interlayer facilitating the annihilation of threading dislocations in polar GaN crystals grown on (0001)-oriented sapphire substrates

Published:2019-08-28 Issue:8 Volume:126 Page:085301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Barchuk M.¹^ORCID,Motylenko M.¹,Schneider T.²,Förste M.²,Röder C.³,Davydok A.⁴,Lazarev S.⁵⁶^ORCID,Schimpf C.¹,Wüstefeld C.¹,Pätzold O.²,Rafaja D.¹^ORCID

Affiliation:

1. Institute of Materials Science, TU Bergakademie Freiberg, Gustav-Zeuner-Str. 5, D-09596 Freiberg, Germany

2. Institute of Nonferrous Metallurgy and Purest Materials, TU Bergakademie Freiberg, Leipziger Str. 34, D-09596 Freiberg, Germany

3. Institute of Theoretical Physics, TU Bergakademie Freiberg, Leipziger Str. 23, D-09596 Freiberg, Germany

4. Institute of Materials Research, Helmholtz-Zentrum Geesthacht, Notkestr. 85, D-22607 Hamburg, Germany

5. Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, D-22607 Hamburg, Germany

6. National Research Tomsk Polytechnic University (TPU), Lenin Avenue 30, 634050 Tomsk, Russian Federation

Funder

Deutsche Forschungsgemeinschaft

Tomsk Polytechnic University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5092284

Reference54 articles.

1. Gallium Nitride (GaN)

2. Technology of Gallium Nitride Crystal Growth

3. Theory of Threading Edge and Screw Dislocations in GaN

4. The estimation of dislocation densities in metals from X-ray data

5. Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe

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