Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation-Reference-Cited by-同舟云学术

Analysis of Anisotropic Growth and Defect Development of Hexagonal GaN under Atomic Simulation

Published:2023-08-07 Issue:9 Volume:23 Page:6876-6884
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Wang Yinghao¹,Li Lianxin¹,Gao Tinghong¹^ORCID,Gao Yue¹,Liu Yutao¹,Xie Quan¹^ORCID

Affiliation:

1. Institute of Advanced Optoelectronic Materials and Technology, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China

Funder

National Natural Science Foundation of China

Industry and Education Combination Innovation Platform of Intelligent Manufacturing and Graduate Joint Training Base at Guizhou University

Guizhou Province Science and Technology Fund

High-level Creative Talent Training Program in Guizhou Province of China

Guizhou Engineering Research Center for Smart Service

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00701

Reference53 articles.

1. Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

2. Quantifying Dynamic On-State Resistance of GaN HEMTs for Power Converter Design via a Survey of Low and High Voltage Devices

3. Analysis of the back-barrier effect in AlGaN/GaN high electron mobility transistor on free-standing GaN substrates

4. Double-sided asymmetric metasurfaces achieving sub-microscale focusing from a GaN green laser diode

5. Suppression the formation of V-pits in InGaN/ GaN multi-quantum well growth and its effect on the performance of GaN based laser diodes