Theory of Threading Edge and Screw Dislocations in GaN-Reference-Cited by-同舟云学术

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Theory of Threading Edge and Screw Dislocations in GaN

Published:1997-11-10 Issue:19 Volume:79 Page:3672-3675
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Elsner J.,Jones R.,Sitch P. K.,Porezag V. D.,Elstner M.,Frauenheim Th.,Heggie M. I.,Öberg S.,Briddon P. R.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.79.3672/fulltext

Reference21 articles.

1. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3

2. Growth defects in GaN films on sapphire: The probable origin of threading dislocations

3. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques

4. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

5. Dislocation motion in GaN light-emitting devices and its effect on device lifetime

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1. Pure edge-dislocation half-loops in low-temperature GaN for V-defect formation;Physical Review Applied;2024-06-17

2. Reducing leakage current in GaN-Schottky diodes by suppressing hollow core nanopipes;AIP Advances;2024-03-01

3. Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors;Journal of Applied Physics;2023-12-28

4. Prediction of Anomalous Variation in GaN-based Chemical Sensors;2022 11th International Conference on Control, Automation and Information Sciences (ICCAIS);2022-11-21

5. Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses;Scientific Reports;2022-10-08

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