Analysis and modeling of reverse-biased gate leakage current in AlGaN/GaN high electron mobility transistors
Author:
Affiliation:
1. Electrical Engineering Department, IIT Bombay 1 , Powai, Mumbai 400076, Maharashtra, India
2. Imec Tower 2 , Leuven 3000, Belgium
3. Centre for Nanotechnology Research, Vellore Institute of Technology 3 , Vellore 632014, Tamilnadu, India
Abstract
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/5.0176944/18279118/244503_1_5.0176944.pdf
Reference35 articles.
1. AlGaN/GaN HEMTs—An overview of device operation and applications;Proc. IEEE,2002
2. Reliability and parasitic issues in GaN-based power HEMTs: A review;Semicond. Sci. Technol.,2016
3. Suppression of gate leakage current in Ka-band AlGaN/GaN HEMT with 5-nm SiN gate dielectric grown by plasma-enhanced ALD;IEEE Trans. Electron Devices,2020
4. Epi-Gd2O3-MOSHEMT: A potential solution toward leveraging the application of AlGaN/GaN/Si HEMT with improved ION/IOFF operating at 473 K;IEEE Trans. Electron Devices,2021
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