Reduction of dislocations in InGaAs layer on GaAs using epitaxial lateral overgrowth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
1. Epitaxial Lateral Overgrowth of GaAs by LPE
2. Epitaxial Lateral Overgrowth of GaAs on a Si Substrate
3. Epitaxial lateral overgrowths of GaAs on (001) GaAs substrates by LPE: Growth behavior and mechanism
4. LPE Lateral Overgrowth of GaP
5. Observations of defects in LPE GaAs revealed by new chemical etchant
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1. Group III Nitrides;Springer Handbook of Electronic and Photonic Materials;2017
2. Liquid-Phase Epitaxy;Handbook of Crystal Growth;2015
3. Liquid Phase Epitaxy: A Survey of Capabilities, Recent Developments and Specialized Applications;Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials;2007-09-04
4. Large area lateral overgrowth of mismatched InGaP on GaAs(111)B substrates;Crystal Research and Technology;2005-12
5. Bending of dislocations in GaN during epitaxial lateral overgrowth;Applied Physics Letters;2004-11-15
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