High-quality GaN crystals grown from double-polarity hydride vapor phase epitaxy and single-polarization regrowth
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.7567/1347-4065/ab0d02/pdf
Reference36 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
3. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
4. Dramatic reduction of dislocations on a GaN point seed crystal by coalescence of bunched steps during Na-flux growth
5. Bulk ammonothermal GaN
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1. Homoepitaxial Regrowth of AlGaN on AlGaN Templates Prepared via Chemical Mechanical Polishing and Its Application to UV‐B Laser Diodes;physica status solidi (a);2024-04-12
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