Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction-Reference-Cited by-同舟云学术

Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

Published:2018-01-10 Issue:16 Volume:123 Page:161563
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Shida K.¹,Takeuchi S.¹^ORCID,Tohei T.¹,Miyake H.²³^ORCID,Hiramatsu K.³,Sumitani K.⁴,Imai Y.⁴,Kimura S.⁴^ORCID,Sakai A.¹^ORCID

Affiliation:

1. Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

2. Graduate School of Regional Innovation Studies, Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan

3. Graduate School of Engineering, Mie University, 1577 Kurima-machiya, Tsu, Mie 514-8507, Japan

4. Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan

Funder

MEXT | Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference32 articles.

1. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy

2. Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

3. Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy

4. Low-pressure HVPE growth of crack-free thick AlN on a trench-patterned AlN template

5. Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

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