Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy

Published:2006-11-27 Issue:22 Volume:89 Page:221901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Imura M.,Nakano K.,Kitano T.,Fujimoto N.,Narita G.,Okada N.,Balakrishnan K.,Iwaya M.,Kamiyama S.,Amano H.,Akasaki I.,Shimono K.,Noro T.,Takagi T.,Bandoh A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2364460

Reference7 articles.

1. In-plane GaN/AlGaN heterostructure fabricated by selective mass transport planar technology

2. Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates

3. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

4. Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy

5. Cathodoluminescence study of deep ultraviolet quantum wells grown on maskless laterally epitaxial overgrown AlGaN

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