Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference28 articles.
1. 222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire
2. Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications
3. Advances in group III-nitride-based deep UV light-emitting diode technology
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1. Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy;Journal of Crystal Growth;2024-01
2. Influence of pressure on AlN thick films prepared by epitaxial lateral overgrowth through hydride vapor phase epitaxy;CrystEngComm;2024
3. AlGaN-Based Self-Powered Solar-Blind UV Focal Plane Array Imaging Photosensors: Material Growth, Device Preparation, and Functional Verification;IEEE Sensors Journal;2023-09-15
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5. Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates;AIP Advances;2023-04-01
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