Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121988
Reference17 articles.
1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Undoped and doped GaN thin films deposited on high-temperature monocrystalline AlN buffer layers on vicinal and on-axis α(6H)–SiC(0001) substrates via organometallic vapor phase epitaxy
4. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
5. Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
Cited by 231 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Pendeo-epitaxial Growth and Characterization of Thin Films of Gallium Nitride and Related Materials on SiC(0001) and Si(111) Substrates;INT J MATER RES;2021
2. III-Nitride Light-Emitting Devices;Photonics;2021-10-07
3. AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate;Applied Physics Express;2021-04-27
4. Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112ˉ0) GaN;Journal of Physics D: Applied Physics;2020-10-20
5. Direct detection of rare earth ion distributions in gallium nitride and its influence on growth morphology;Journal of Applied Physics;2020-01-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3