Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy

Published:2006-12 Issue:2 Volume:297 Page:321-325
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kamber Derrick S.,Wu Yuan,Haskell Benjamin A.,Newman Scott,DenBaars Steven P.,Speck James S.,Nakamura Shuji

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference18 articles.

1. Nonmetallic crystals with high thermal conductivity

2. Crystal growth of aluminum nitride under high pressure of nitrogen

3. Fabrication of native, single‐crystal AlN substrates

4. Seeded growth of AlN bulk single crystals by sublimation

5. Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crack-free > 1-μm AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film;Applied Physics Letters;2024-09-09

2. Realization of Low Dislocation Density AlN on Patterned Sapphire Substrate by Hydride Vapor‐Phase Epitaxy for Deep Ultraviolet Light‐Emitting Diodes;physica status solidi (a);2023-05-23

3. Heteroepitaxial AlN growth on c-plane sapphire substrates by ammonia-free high temperature metalorganic chemical vapor deposition;Journal of Crystal Growth;2022-03

4. Behaviours of the lattice-polarity inversion in AlN growth on c-Al₂O₃ (0001) substrates by ammonia-free high temperature metalorganic chemical vapor deposition;CrystEngComm;2022

5. AlN nucleation and spontaneous pattern formation via combustion of an Al-C-AlF3 mixture in nitrogen;Journal of Crystal Growth;2021-04

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