Insights into ultraviolet-induced electrical degradation of thermally grown SiO2/4H-SiC(0001) interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4860987
Reference20 articles.
1. High-voltage (>1 kV) SiC Schottky barrier diodes with low on-resistances
2. Effects of nitridation in gate oxides grown on 4H-SiC
3. Interface Properties of Metal–Oxide–Semiconductor Structures on 4H-SiC{0001} and (11\bar20) Formed by N2O Oxidation
4. Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs
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1. Degradation of NO-nitrided SiC MOS interfaces by excimer ultraviolet light irradiation;Applied Physics Express;2022-09-28
2. Impact of nitridation on the reliability of 4H-SiC(112̄0) MOS devices;Applied Physics Express;2022-03-16
3. Comprehensive physical and electrical characterizations of NO nitrided SiO2/4H-SiC(112̄0) interfaces;Japanese Journal of Applied Physics;2022-03-02
4. High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices;Applied Physics Express;2021-09-22
5. Effect of Ultraviolet Irradiation on 4H-SiC PiN Diodes Characteristics;Nanoscale Research Letters;2021-09-10
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