Bias-stress induced threshold voltage and drain current instability in 4H–SiC DMOSFETs

Author:

Okayama T.,Arthur S.D.,Garrett J.L.,Rao M.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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2. Palmour JW, Singh R, Glass R, Kordina O, Carter CHJ. Power semiconductor devices and IC’s. In: ISPSD; 1997.

3. Status of silicon carbide (SiC) as a wide-bandgap. Semiconductor for high temperature applications: a review;Casady;Solid-State Electron,1996

4. Agarwal A, Ryu SH. Status of SiC power devices and manufacturing issues. In: CS MANTECH: Vancouver, British Columbia, Canada; 2006. p. 215–8.

5. Significantly improved performance of MOSFET‘s on silicon carbide using the 15R–SiC polytype;Schorner;IEEE Electron Dev Lett,1999

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