Abstract
Abstract
The leakage current and flat-band voltage (V
FB) instability of NO-nitrided SiC(11
2
¯
0) (a-face) MOS devices were systematically investigated. Although NO nitridation is effective in improving the interface properties, we found that it reduces the onset field of Fowler–Nordheim current by about 1 MV cm−1, leading to pronounced leakage current. Synchrotron radiation X-ray photoelectron spectroscopy revealed that the nitridation reduces the conduction band offset at the SiO2/SiC interface, corroborating the above finding. Furthermore, systematical positive and negative bias stress tests clearly indicated the enhancement of V
FB instability of nitrided a-face MOS devices against electron and hole injection.
Funder
Ministry of Education, Culture, Sports, Science and Technology
TPEC
Japan Society for the Promotion of Science
Japan Atomic Energy Agency
Subject
General Physics and Astronomy,General Engineering
Cited by
4 articles.
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