Generation of very fast states by nitridation of the SiO2/SiC interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4740068
Reference36 articles.
1. Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing
2. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
3. Enhanced channel mobility of 4H–SiC metal–oxide–semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation
4. Effect of process variations and ambient temperature on electron mobility at the SiO/sub 2//4H-SiC interface
5. The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices
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