The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices-Reference-Cited by-同舟云学术

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The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H–SiC MOS devices

Published:2011-03 Issue:1 Volume:57 Page:76-79
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhu Xingguang,Ahyi Ayayi C.,Li Mingyu,Chen Zengjun,Rozen John,Feldman Leonard C.,Williams John R.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

2. SiC power-switching devices-the second electronics revolution?

3. Ultrashallow defect states at SiO2∕4H–SiC interfaces

4. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon

5. Characterization of thin-oxide MNOS memory transistors

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques;Microelectronics Journal;2024-08

2. Impact of Process on Gate Leakage Current and Time-Dependent Dielectric Breakdown Failure Mechanisms of 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-07

3. Device Processing Chain and Processing SiC in a Foundry Environment;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

4. Bias temperature instability in SiC metal oxide semiconductor devices;Journal of Physics D: Applied Physics;2021-01-19

5. Synergistic passivation effects of nitrogen plasma and oxygen plasma on improving the interface quality and bias temperature instability of 4H-SiC MOS capacitors;Applied Surface Science;2020-05

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