High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac23e8/pdf
Reference33 articles.
1. Material science and device physics in SiC technology for high-voltage power devices
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3. Defects inSiO2as the possible origin of near interface traps in theSiC∕SiO2system: A systematic theoretical study
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5. Defect levels of carbon-related defects at the SiC/SiO2interface from hybrid functionals
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1. Design of SiO2/4H–SiC MOS interfaces by sputter deposition of SiO2 followed by high-temperature CO2-post deposition annealing;AIP Advances;2023-11-01
2. Control on the density and optical properties of color centers at SiO2/SiC interfaces by oxidation and annealing;Applied Physics Letters;2023-09-04
3. Improvement of interface properties in SiC(0001) MOS structures by plasma nitridation of SiC surface followed by SiO2 deposition and CO2 annealing;Applied Physics Express;2023-07-01
4. Working principle and characteristic analysis of SiC MOSFET;Journal of Physics: Conference Series;2023-02-01
5. Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors;Applied Physics Express;2022-05-24
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