Abrupt Si/Ge interface formation using atomic hydrogen in Si molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112481
Reference17 articles.
1. Is low temperature growth the solution to abrupt Si⧸Si1-xGex interface formation?
2. Are bare surfaces detrimental in epitaxial growth?
3. Luminescence from Strained Si1-xGex/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
4. Surfactants in epitaxial growth
5. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
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