Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement-Reference-Cited by-同舟云学术

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Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement

Published:2014 Issue:8 Volume:3 Page:Q162-Q168
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Guo Pengfei,Cheng Ran,Wang Wei,Zhang Zheng,Pan Jisheng,Tok Eng Soon,Yeo Yee-Chia

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference45 articles.

1. High-mobility germanium-tin (GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370 °C process modules

2. GeSn technology: Extending the Ge electronics roadmap

3. Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

4. Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

5. Electron scattering in Ge metal-oxide-semiconductor field-effect transistors

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Remote plasma-enhanced chemical vapor deposition of GeSn on Si (100), Si (111), sapphire, and fused silica substrates;Journal of Vacuum Science & Technology B;2024-08-20

2. Composition analysis and transition energies of ultrathin Sn-rich GeSn quantum wells;Physical Review Materials;2020-02-19

3. Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment;Japanese Journal of Applied Physics;2019-02-22

4. Epitaxial GeSn: impact of process conditions on material quality;Semiconductor Science and Technology;2018-10-16

5. Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate;IEEE Transactions on Electron Devices;2018-09

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