Is low temperature growth the solution to abrupt Si⧸Si1-xGex interface formation?
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Low‐temperature homoepitaxy on Si(111)
2. Ge segregation at Si/Si1−xGex interfaces grown by molecular beam epitaxy
3. Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
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2. Room temperature 1.25μm emission from high indium content InxGa1−xAs/GaAs quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2005-05
3. High-indium-content InxGa1−xAs/GaAs quantum wells with emission wavelengths above 1.25 μm at room temperature;Applied Physics Letters;2004-06-21
4. Ge instabilities near interfaces in Si/SiGe/Si heterostructures;Materials Science and Engineering: B;2003-08
5. Dimer-Exchange Mechanism in Surfactant-Mediated Si/Ge Epitaxial Growth;The Journal of Physical Chemistry B;2002-01-10
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