Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb-Reference-Cited by-同舟云学术

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Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb

Published:1990-11-20 Issue:Part 2, No. 11 Volume:29 Page:L1981-L1983
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujita Ken,Fukatsu Susumu,Yaguchi Hiroyuki,Igarashi Takayuki,Shiraki Yasuhiro,Ito Ryoichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 99 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A dislocation-driven laminated relaxation process in Si1−xGex grown on Si (001) by molecular beam epitaxy;Materials Today Nano;2021-12

2. Carbon-mediated epitaxy of SiGe virtual substrates on Si(001);Semiconductor Science and Technology;2018-10-04

3. Heteroepitaxial Growth of Si, Si1−xGex-, and Ge-Based Alloy;Handbook of Crystal Growth;2015

4. Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters;Journal of Crystal Growth;2014-06

5. Formation of SiGe Heterostructures and Their Properties;Springer Handbook of Crystal Growth;2010

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