Segregation of Sb in SiGe heterostructures grown by molecular beam epitaxy: Interdependence of growth conditions and structure parameters
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference19 articles.
1. Fabrication technology of SiGe hetero-structures and their properties;Shiraki;Surf. Sci. Rep.,2005
2. Si/SiGe heterostructures: from material and physics to devices and circuits;Paul;Semicond. Sci. Technol.,2004
3. Surface segregation of Sb on Si(001) during molecular beam epitaxy growth;Jorke;Surf. Sci.,1988
4. Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy;Hobart;Surf. Sci.,1995
5. Segregation and diffusion on semiconductor surfaces;Nutzel;Phys. Rev. B,1996
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