Antimony segregation in Ge and formation of n-type selectively doped Ge films in molecular beam epitaxy
Author:
Affiliation:
1. Institute for Physics of Microstructures, Russian Academy of Sciences, GSP-105, 603950 Nizhny Novgorod, Russia
2. Lobachevsky State University of Nizhni Novgorod, 23 Prospekt Gagarina, 603950 Nizhny Novgorod, Russia
Funder
Scholarship of President of Russian Federation for young scientists
Russian Foundation for Basic Research (RFBR)
Ministry of Education and Science of the Russian Federation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4932665
Reference41 articles.
1. Academic and industry research progress in germanium nanodevices
2. Si/SiGe heterostructures: from material and physics to devices and circuits
3. High-performance Ge-on-Si photodetectors
4. Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate
5. Silicon Fundamentals for Photonics Applications
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