Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials-Reference-Cited by-同舟云学术

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Influence of hydrogen surface passivation on Sn segregation, aggregation, and distribution in GeSn/Ge(001) materials

Published:2015-05-28 Issue:20 Volume:117 Page:205302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Johll Harman¹,Samuel Milla¹,Koo Ruey Yi¹,Kang Hway Chuan²,Yeo Yee-Chia³^ORCID,Tok Eng Soon⁴

Affiliation:

1. National Junior College, 37 Hillcrest Road, Singapore 288913, Singapore

2. Department of Chemistry and Yale-NUS College, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

3. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore

4. Department of Physics and Yale-NUS College, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore

Funder

Yale-NUS College, National University of Singapore

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4921594

Reference30 articles.

1. Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation

2. New materials for post-Si computing: Ge and GeSn devices

3. (Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si2H6 Passivation

4. Silicon Surface Passivation Technology for Germanium-Tin P-Channel MOSFETs: Suppression of Germanium and Tin Segregation for Mobility Enhancement

5. Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of temperature and H₂ on GePb/Ge multiple quantum well growth;Journal of Physics D: Applied Physics;2024-03-21

2. Spontaneously Conversion from Film to High Crystalline Quality Stripe during Molecular Beam Epitaxy for High Sn Content GeSn;Scientific Reports;2020-04-09

3. Enhanced optical and electrical performance of Ge1−x Sn x /Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments;Semiconductor Science and Technology;2019-03-20

4. Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

5. Thermal stability of germanium-tin (GeSn) fins;Applied Physics Letters;2017-12-18

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