(Invited) Germanium-Tin P-Channel Field-Effect Transistor with Low-Temperature Si2H6 Passivation

Abstract

In the past decade, significant effort has been made in the research community to search for alternative high mobility channel materials as replacement for silicon which has been the dominant channel material in complementary metal-oxide-semiconductor (CMOS) technology for almost 50 years. Among possible candidates, Germanium-tin (GeSn) has high hole mobility and is a promising channel material for scaling the supply voltage towards 0.5 V for high-performance p-channel field-effect transistors (pFETs) in the sub-10 nm technology nodes. In this paper, we discuss the research and development of using GeSn as the channel material of pFETs for enhancing the hole mobility and drive current. This includes GeSn planar pFETs, GeSn nanowire (NW) pFETs, as well as GeSn tunneling FETs (TFETs). Low-temperature Si2H6 passivation was developed to realize high-quality gate stack on GeSn.