Ultra-low specific contact resistivity (1.4 × 10−9 Ω·cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

Author:

Wu Ying1,Luo Sheng1ORCID,Wang Wei1ORCID,Masudy-Panah Saeid1,Lei Dian1ORCID,Liang Gengchiau1,Gong Xiao1,Yeo Yee-Chia1ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576

Funder

National University of Singapore

Ministry of Education - Singapore

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference43 articles.

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3. Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range

4. Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node

5. H. Yu , M. Schaekers , A. Hikavyy , E. Rosseel , A. Peter , K. Hollar , F. A. Khaja , W. Aderhold , L. Date , and A. J. Mayur , in Digest of Technical Papers–Symposium on VLSI Technology (2016), pp. 66–67.

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