Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4816695
Reference43 articles.
1. High Mobility Materials and Novel Device Structures for High Performance Nanoscale MOSFETs
2. High mobility strained germanium quantum well field effect transistor as the p-channel device option for low power (Vcc = 0.5 V) III–V CMOS architecture
3. 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation
4. High Hole-Mobility Strained-$\hbox{Ge/Si}_{0.6} \hbox{Ge}_{0.4}$ P-MOSFETs With High-K/Metal Gate: Role of Strained-Si Cap Thickness
5. High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
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