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Subthreshold modeling of nanoscale germanium-tin (GeSn)-on-insulator MOSFETs including quantum effects

  • Published:2019-05 Issue: Volume:94 Page:128-135
  • ISSN:1369-8001
  • Container-title:Materials Science in Semiconductor Processing
  • language:en
  • Short-container-title:Materials Science in Semiconductor Processing

Author:

Paul Jayanti,Mondal Chandrima,Biswas Abhijit

Funder

University Grants Commission

SERB

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Theoretical analysis of GeSn alloys as a gain medium for a Si-compatible laser;Dutt;IEEE J. Sel. Top. Quantum Electron.,2013

2. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy;Chen;Appl. Phys. Lett.,2011

3. Achieving direct band gap in germanium through integration of Sn alloying and external strain;Gupta;J. Appl. Phys.,2013

4. Material gain engineering in GeSn/Ge quantum wells integrated with an Si platform;Mączko;Sci. Rep.,2016

5. Theoretical investigation of performance enhancement in GeSn/SiGeSn type-II staggered heterojunction tunneling FET;Wang;IEEE Trans. Electron. Dev.,2016

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