Abstract
Abstract
Based on the photovoltaic properties and tandem solar cells theory, Gallium Indium Arsenide/Germanium Stannide (GaInAs/GeSn)-based double-junction (DJ) solar cells have been numerically simulated for the first time. In this study, we explore the band gap combination under lattice matching and obtain the content of In/Sn at optimal efficiency, which is expressed as Ga0.84In0.16As/Ge0.93Sn0.07 DJ solar cell (1.20/0.58 eV). Afterward, it is optimized in terms of variation in the doping contents and active layer thickness. To take full advantage of the electron mobility of the material, the optimal ‘inverted doping profile’ concentration N
a(d) is 1.5(5)/5(20) × 1018 cm−3. In addition, the reasonable p(n) layer thickness could be comprised of 0.2–0.8(0.2–1)/0.5–3(1–4) μm of the DJ solar cells with less material consumption. When the p(n) layer thickness is 0.30(0.25)/0.9(1.35) μm, the tandem device can achieve an optimal efficiency of 31.00% with 28.98 mA cm−2 (J
sc), 1.25 V (V
oc) and 85% (FF). This study highlights that GeSn materials have the potential to combine with III–V materials to form low-cost and high-efficiency tandem devices.
Funder
National Natural Science Foundation of China Youth Fund
Beijing Science and Technology New Star Program
Subject
Metals and Alloys,Polymers and Plastics,Surfaces, Coatings and Films,Biomaterials,Electronic, Optical and Magnetic Materials