GaP heteroepitaxy on Si(001): Correlation of Si-surface structure, GaP growth conditions, and Si-III/V interface structure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4706573
Reference28 articles.
1. Dilute nitride Ga(NAsP)/GaP-heterostructures: toward a material development for novel optoelectronic functionality on Si-substrate
2. Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
3. MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications
4. Polar-on-nonpolar epitaxy
5. Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopy
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