Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference11 articles.
1. First demonstration of electrical injection lasing in the novel dilute nitride Ga(NAsP)/GaP-material system
2. Direct-band-gap Ga(NAsP)-material system pseudomorphically grown on GaP substrate
3. Luminescence investigations of the GaP-based dilute nitride Ga(NAsP) material system
4. Near room temperature electrical injection lasing for dilute nitride Ga(NAsP)/GaP quantum-well structures grown by metal organic vapour phase epitaxy
5. Polar-on-nonpolar epitaxy
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2. Structure and Origin of Antiphase Domains and Related Defects in Thin GaP Epilayers on As-Modified Si(100);Crystal Growth & Design;2022-11-17
3. Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures;Journal of Crystal Growth;2021-05
4. The role of antiphase domain boundary density on the surface roughness of GaSb epilayers grown on Si (001) substrates;Superlattices and Microstructures;2020-04
5. High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates;ECS Transactions;2019-12-17
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