High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual Substrates
Author:
Publisher
The Electrochemical Society
Link
https://iopscience.iop.org/article/10.1149/1.3487614/pdf
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Metalorganic chemical vapor deposition-regrown Ga-rich InGaP films on SiGe virtual substrates for Si-based III-V optoelectronic device applications;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-05
2. Direct MOCVD epitaxy of GaAsP on SiGe virtual substrate without growth of SiGe;Journal of Crystal Growth;2016-05
3. Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices;Journal of Materials Chemistry A;2016
4. A Yellow InGaP Light Emitting Diode Epitaxially Grown on Si Substrate;Asia Communications and Photonics Conference 2015;2015
5. Single-junction GaAsP solar cells grown on SiGe graded buffers on Si;Applied Physics Letters;2013-11-04
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