Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices-Reference-Cited by-同舟云学术

Gallium arsenide phosphide grown by close-spaced vapor transport from mixed powder sources for low-cost III–V photovoltaic and photoelectrochemical devices

Published:2016 Issue:8 Volume:4 Page:2909-2918
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Greenaway Ann L.¹²³⁴,Davis Allison L.⁵⁶⁷⁴,Boucher Jason W.⁸²³⁴,Ritenour Andrew J.¹²³⁴,Aloni Shaul⁹¹⁰¹¹⁴,Boettcher Shannon W.¹²³⁴

Affiliation:

1. Department of Chemistry and Biochemistry

2. University of Oregon

3. Eugene

4. USA

5. Department of Natural and Physical Sciences

6. Park University

7. Parkville

8. Department of Physics

9. The Molecular Foundry

10. Lawrence Berkeley National Laboratory

11. Berkeley

Abstract

Close-spaced vapor transport provides GaAs_1−xP_x with controlled composition and competitive electronic properties.

Funder

Solar Energy Technologies Program

Division of Graduate Education

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TA/C5TA06900A

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