Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates-Reference-Cited by-同舟云学术

Water-Vapor-Mediated Close-Spaced Vapor Transport Growth of Epitaxial Gallium Indium Phosphide Films on Gallium Arsenide Substrates

Published:2018-01-17 Issue:2 Volume:1 Page:284-289
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Greenaway Ann L.¹^ORCID,Bachman Benjamin F.¹,Boucher Jason W.²,Funch Christopher J.¹,Aloni Shaul³,Boettcher Shannon W.¹^ORCID

Affiliation:

1. Department of Chemistry and Biochemistry, University of Oregon, Eugene, Oregon 97403, United States

2. Department of Physics, University of Oregon, Eugene, Oregon 97403, United States

3. The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

Funder

Basic Energy Sciences

Research Corporation for Science Advancement

American Association of University Women

Alfred P. Sloan Foundation

Solar Energy Technologies Program

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.7b00199

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