Single-junction GaAsP solar cells grown on SiGe graded buffers on Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4828879
Reference25 articles.
1. Spectrum-optimized Si-based III-V multijunction photovoltaics
2. Dislocation glide and blocking kinetics in compositionally graded SiGe/Si
3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
4. Dislocations in Relaxed SiGe/Si Heterostructures
5. Metal-organic chemical vapor deposition of single domain GaAs on Ge/GexSi1−x/Si and Ge substrates
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4. Nondestructive characterization of threading dislocations in graded buffer layers of inverted metamorphic solar cells by two-photon excitation spectroscopy;Applied Physics Express;2021-10-20
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