Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures-Reference-Cited by-同舟云学术

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Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures

Published:2021-05 Issue: Volume:562 Page:126059
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Boley Allison,Luna Esperanza,Zhang C.,Faleev N.,Honsberg C.B.,Smith David J.

Funder

National Science Foundation

US Department of Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference28 articles.

1. New Semiconductor Materials Characteristics and Properties. Ioffe Physico-Technical Institute, 2001.

2. Ways to quantitatively detect antiphase disorder in GaP films grown on Si(001) by transmission electron microscopy

3. Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

4. Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures

5. Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy;Journal of Semiconductors;2022-12-01

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