Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces-Reference-Cited by-同舟云学术

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Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces

Published:2016-10-18 Issue:15 Volume:94 Page:
ISSN:2469-9950
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Romanyuk O.,Supplie O.,Susi T.,May M. M.,Hannappel T.

Funder

Grantová Agentura České Republiky

Ministerstvo Školství, Mládeže a Tělovýchovy

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

Austrian Science Fund

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.94.155309/fulltext

Reference48 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. Efficient direct solar-to-hydrogen conversion by in situ interface transformation of a tandem structure

3. Why some interfaces cannot be sharp

4. Polar heterojunction interfaces

5. Polar-on-nonpolar epitaxy

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