Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures-Reference-Cited by-同舟云学术

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Investigation of defect creation in GaP/Si(0 0 1) epitaxial structures

Published:2018-12 Issue: Volume:503 Page:36-44
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Zhang Chaomin^ORCID,Boley Allison,Faleev Nikolai,Smith David J.,Honsberg Christiana B.

Funder

U.S. Department of Energy

National Science Foundation

Office of Energy Efficiency and Renewable Energy

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference38 articles.

1. Heteroepitaxial technologies of III–V on Si

2. Control of N Content of GaPN Grown by Molecular Beam Epitaxy and Growth of GaPN Lattice Matched to Si(100) Substrate

3. MOCVD-Grown GaP/Si Subcells for Integrated III–V/Si Multijunction Photovoltaics

4. C. Zhang, N.N. Faleev, L. Ding, M. Boccard, M. Bertoni, Z. Holman, R.R. King, C.B. Honsberg, Hetero-emitter GaP/Si solar cells with high Si bulk lifetime, in: 2016 IEEE 43rd. Photovolt. Spec. Conf., IEEE, 2016: pp. 1950–1953. http://doi.org/10.1109/PVSC.2016.7749966.

5. Gallium Phosphide Window Layer for Silicon Solar Cells

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1. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy;Journal of Semiconductors;2022-12-01

2. Investigation and optimization of casting defects of rear sight base part of AK47 developed by investment casting process;Casting Processes;2022-09

3. Challenges of relaxed n-type GaP on Si and strategies to enable low threading dislocation density;Journal of Applied Physics;2021-12-28

4. Interfacial intermixing and anti-phase boundaries in GaP/Si(0 0 1) heterostructures;Journal of Crystal Growth;2021-05

5. Epitaxial synthesis of single-domain gallium phosphide on silicon;Journal of Physics: Conference Series;2020-12-01

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