Gamma-ray irradiation effect on planar defect evolution of lattice-matched InGaAsN/GaAs/Ge grown by MOVPE-Reference-Cited by-同舟云学术

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Gamma-ray irradiation effect on planar defect evolution of lattice-matched InGaAsN/GaAs/Ge grown by MOVPE

Published:2024-09 Issue: Volume:227 Page:113396
ISSN:0042-207X
Container-title:Vacuum
language:en
Short-container-title:Vacuum

Author:

Wanarattikan Pornsiri,Phakkhawan Authit,Sakulkalavek Aparporn,Jangsawang Nongnuch,Kijamnajsuk Suphakan^ORCID,Yordsri Visittapong,Sanorpim Sakuntam,Klangtakai Pawinee^ORCID

Publisher

Elsevier BV

Reference20 articles.

1. Performance analysis of GaAs based solar cells under gamma irradiation;Nikola;Appl. Surf. Sci.,2020

2. Investigation of radiation effect on structural and optical properties of GaAs under high-energy electron irradiation;Phakkhawan;Materials,2022

3. Effect of 60Co c-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode;Shailesh;Nucl. Instrum. Methods Phys. Res. B,2011

4. Effect of Alpha-Particle irradiation on InGaP/GaAs/Ge Triple-junction solar cells;Xu;Materials,2018

5. Radiation hardness of GaAs sensors against gamma-rays, neutrons and electrons;Sagatova;Appl. Surf. Sci.,2017

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