MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications-Reference-Cited by-同舟云学术

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MOVPE III–V material growth on silicon substrates and its comparison to MBE for future high performance and low power logic applications

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
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Author:

Mukherjee N.,Boardman J.,Chu-Kung B.,Dewey G.,Eisenbach A.,Fastenau J.,Kavalieros J.,Liu W. K.,Lubyshev D.,Metz M.,Millard K.,Radosavljevic M.,Stewart T.,Then H. W.,Tolchinsky P.,Chau R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131675.pdf?arnumber=6131675

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. III-V Devices and Technology for CMOS;High Mobility Materials for CMOS Applications;2018

2. Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers;Journal of Crystal Growth;2017-11

3. Methods for modeling non-equilibrium degenerate statistics and quantum-confined scattering in 3D ensemble Monte Carlo transport simulations;Journal of Applied Physics;2016-12-14

4. Review—Device Assessment of Electrically Active Defects in High-Mobility Materials;ECS Journal of Solid State Science and Technology;2016

5. III–V/Ge channel MOS device technologies in nano CMOS era;Japanese Journal of Applied Physics;2015-05-07

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