Review—Device Assessment of Electrically Active Defects in High-Mobility Materials-Reference-Cited by-同舟云学术

Review—Device Assessment of Electrically Active Defects in High-Mobility Materials

Published:2016 Issue:4 Volume:5 Page:P3149-P3165
ISSN:2162-8769
Container-title:ECS Journal of Solid State Science and Technology
language:en
Short-container-title:ECS J. Solid State Sci. Technol.

Author:

Claeys C.,Simoen E.,Eneman G.,Ni K.,Hikavyy A.,Loo R.,Gupta S.,Merckling C.,Alian A.,Caymax M.

Publisher

The Electrochemical Society

Subject

Electronic, Optical and Magnetic Materials

Reference187 articles.

1. The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensation

2. Formation and nature of swirl defects in silicon

3. The mechanism of swirl defects formation in silicon

4. Recent progress in the understanding of crystallographic defects in silicon

5. Claeys C. Vanhellemont J. , in Advanced Silicon & Semiconducting Silicon-Alloy Based Materials & Devices, Nijs J. F. A. , Editor, IOP Publishing Ltd., Bristol, UK, Chapter 2, 35 (1994).

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